Multi-zone pedestal for plasma processing

ABSTRACT

A method and apparatus for a heated pedestal is provided. In one embodiment, the heated pedestal includes a body comprising a ceramic material, a plurality of heating elements encapsulated within the body, and one or more grooves formed in a surface of the body adjacent each of the plurality of heating elements, at least one side of the grooves being bounded by a ceramic plate.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.14/738,610 (Attorney Docket No. 021688US), filed Jun. 12, 2015, whichapplication claims benefit of U.S. Provisional Patent Application Ser.No. 62/020,186 (Attorney Docket No. 021688USAL), filed Jul. 2, 2014,which are all hereby incorporated by reference herein.

BACKGROUND

Field

Embodiments disclosed herein generally relate to a semiconductorprocessing chamber and, more specifically, a heated support pedestal fora semiconductor processing chamber having multi-zone temperaturecontrol.

Description of the Related Art

Semiconductor processing involves a number of different chemical andphysical processes enabling minute integrated circuits to be created ona substrate. Layers of materials which make up the integrated circuitare created by chemical vapor deposition, physical vapor deposition,epitaxial growth, and the like. Some of the layers of material arepatterned using photoresist masks and wet or dry etching techniques. Thesubstrate utilized to form integrated circuits may be silicon, galliumarsenide, indium phosphide, glass, or other appropriate material.

In the manufacture of integrated circuits, plasma processes are oftenused for deposition or etching of various material layers. Plasmaprocessing offers many advantages over thermal processing. For example,plasma enhanced chemical vapor deposition (PECVD) allows depositionprocesses to be performed at lower temperatures and at higher depositionrates than achievable in analogous thermal processes. Thus, PECVD isadvantageous for integrated circuit fabrication with stringent thermalbudgets, such as for very large scale or ultra-large scale integratedcircuit (VLSI or ULSI) device fabrication.

The processing chambers used in these processes typically include asubstrate support or pedestal disposed therein to support the substrateduring processing. In some processes, the pedestal may include anembedded heater adapted to control the temperature of the substrateand/or provide elevated temperatures that may be used in the process.Conventionally, the pedestals may be made of a ceramic material, whichgenerally provide desirable device fabrication results.

However, ceramic pedestals create numerous challenges. One of thesechallenges is multiple zone heating and/or accurate temperature controlof one or more of the zones. In addition, ceramic materials may not bereadily machinable as compared to other materials, such as aluminum, andcreates a manufacturing challenge for the forming of grooves therein forelectrical leads and/or for embedded temperature sensing devices.

Therefore, what is needed is a pedestal that is temperature-controlledin multiple zones.

SUMMARY

A method and apparatus of a heated pedestal is provided. In oneembodiment, the heated pedestal includes a body comprising a bodycomprising a ceramic material, wherein one or more grooves are formed inone or more surfaces of the body, a ceramic plate bounding least oneside of the grooves, and a plurality of heating elements encapsulatedwithin the body.

In another embodiment, a pedestal for a semiconductor processing chamberis provided. The pedestal includes a body comprising a ceramic material,wherein one or more grooves are formed a major surface of the body, aceramic plate coupled to the major surface and bounding at least oneside of the grooves, a plurality of heating elements encapsulated withinthe body, a hollow shaft comprising a ceramic material coupled to thebody, and a dielectric insert having a plurality of channels formedtherein disposed in the hollow shaft.

In another embodiment, a pedestal for a semiconductor processing chamberis provided. The pedestal includes a body comprising a ceramic material,wherein one or more grooves are formed a major surface of the body, aceramic plate coupled to the major surface and bounding at least oneside of the grooves, a plurality of heating elements encapsulated withinthe body, a hollow shaft comprising a ceramic material coupled to thebody, and a dielectric insert having a plurality of channels formedtherein disposed in the hollow shaft, wherein at least a portion of thechannels in the dielectric insert comprise a curved portion having anend terminating at an end of at least one of the grooves formed in thebody.

BRIEF DESCRIPTION OF THE DRAWINGS

So that the manner in which the above-recited features of the presentdisclosure can be understood in detail, a more particular description,briefly summarized above, may be had by reference to embodiments, someof which are illustrated in the appended drawings. It is to be noted,however, that the appended drawings illustrate only typical embodimentsand are therefore not to be considered limiting of its scope, for theembodiments disclosed herein may admit to other equally effectiveembodiments.

FIG. 1 is a partial cross sectional view of one embodiment of a plasmasystem.

FIGS. 2A-2D are top views of various embodiments of a pedestal that maybe utilized as the pedestal in the plasma system of FIG. 1.

FIG. 3 is a cross-sectional view of another embodiment of a pedestalthat may be used in the plasma system of FIG. 1.

FIGS. 4A-4C are plan views of the pedestal taken along section line 4-4in FIG. 3 showing various embodiments of a dielectric insert thereof.

FIG. 5 is an isometric exploded cross-sectional view of one embodimentof a pedestal that may be used in the plasma system of FIG. 1.

FIG. 6 is a side cross-sectional view of another embodiment of apedestal that may be used in the plasma system of FIG. 1.

FIG. 7 is a side cross-sectional view of another embodiment of apedestal that may be used in the plasma system of FIG. 1.

FIGS. 8A and 8B are side cross-sectional view showing a portion ofanother embodiment of a pedestal that may be used in the plasma systemof FIG. 1.

FIGS. 9A and 9B are side views of another embodiment of a pedestal thatmay be used in the plasma system of FIG. 1.

To facilitate understanding, identical reference numerals have beenused, where possible, to designate identical elements that are common tothe figures. It is contemplated that elements disclosed in oneembodiment may be beneficially utilized on other embodiments withoutspecific recitation.

DETAILED DESCRIPTION

Embodiments of the present disclosure are illustratively described belowin reference to plasma chambers, although embodiments described hereinmay be utilized in other chamber types and in multiple processes. In oneembodiment, the plasma chamber is utilized in a plasma enhanced chemicalvapor deposition (PECVD) system. Examples of PECVD systems that may beadapted to benefit from the disclosure include a PRODUCER® SE CVDsystem, a PRODUCER® GT™ CVD system or a DXZ® CVD system, all of whichare commercially available from Applied Materials, Inc., Santa Clara,Calif. The Producer® SE CVD system chamber (e.g., 200 mm or 300 mm) hastwo isolated processing regions that may be used to deposit thin filmson substrates, such as conductive films, oxide films such as siliconoxide films, carbon-doped silicon oxides and other materials. Althoughthe exemplary embodiment includes two processing regions, it iscontemplated that embodiments disclosed herein may be used to advantagein systems having a single processing region or more than two processingregions. It is also contemplated that embodiments disclosed herein maybe utilized to advantage in other plasma chambers, including etchchambers, ion implantation chambers, plasma treatment chambers, and inresist stripping chambers, among others. It is further contemplated thatembodiments disclosed herein may be utilized to advantage in plasmaprocessing chambers available from other manufacturers.

FIG. 1 is a partial cross sectional view of a plasma system 100. Theplasma system 100 generally comprises a processing chamber body 102having sidewalls 112, a bottom wall 116 and a shared interior sidewall101 defining a pair of processing regions 120A and 120B. Each of theprocessing regions 120A-B is similarly configured, and for the sake ofbrevity, only components in the processing region 120B will bedescribed.

A pedestal 128 is disposed in the processing region 120B through apassage 122 formed in the bottom wall 116 in the system 100. Thepedestal 128 provides a heater adapted to support a substrate (notshown) on the upper surface thereof. The pedestal 128 may includeheating elements, for example resistive heating elements, to heat andcontrol the substrate temperature at a desired process temperature.Alternatively, the pedestal 128 may be heated by a remote heatingelement, such as a lamp assembly.

The pedestal 128 is coupled by a flange 133 to a stem 126. The stem 126couples the pedestal 128 to a power outlet or power box 103. The powerbox 103 may include a drive system that controls the elevation andmovement of the pedestal 128 within the processing region 120B. The stem126 also contains electrical power interfaces to provide electricalpower to the pedestal 128. The power box also 103 also includesinterfaces for electrical power and temperature indicators, such as athermocouple interface. The stem 126 also includes a base assembly 129adapted to detachably couple to the power box 103 thereto. Acircumferential ring 135 is shown above the power box 103. In oneembodiment, the circumferential ring 135 is a shoulder adapted as amechanical stop or land configured to provide a mechanical interfacebetween the base assembly 129 and the upper surface of the power box103.

A rod 130 is disposed through a passage 124 formed in the bottom wall116 of the processing region 120B and is utilized to position substratelift pins 161 disposed through the pedestal 128. The substrate lift pins161 selectively space the substrate from the pedestal to facilitateexchange of the substrate with a robot (not shown) utilized fortransferring the substrate into and out of the processing region 120Bthrough a substrate transfer port 160.

A chamber lid 104 is coupled to a top portion of the chamber body 102.The lid 104 accommodates one or more gas distribution systems 108coupled thereto. The gas distribution system 108 includes a gas inletpassage 140 which delivers reactant and cleaning gases through ashowerhead assembly 142 into the processing region 120B. The showerheadassembly 142 includes an annular base plate 148 having a blocker plate144 disposed intermediate to a faceplate 146. A radio frequency (RF)source 165 is coupled to the showerhead assembly 142. The RF source 165powers the showerhead assembly 142 to facilitate generation of a plasmabetween the faceplate 146 of the showerhead assembly 142 and the heatedpedestal 128. In one embodiment, the RF source 165 may be a highfrequency radio frequency (HFRF) power source, such as a 13.56 MHz RFgenerator. In another embodiment, RF source 165 may include a HFRF powersource and a low frequency radio frequency (LFRF) power source, such asa 300 kHz RF generator. Alternatively, the RF source may be coupled toother portions of the processing chamber body 102, such as the pedestal128, to facilitate plasma generation. A dielectric isolator 158 isdisposed between the lid 104 and showerhead assembly 142 to preventconducting RF power to the lid 104. A shadow ring 106 may be disposed onthe periphery of the pedestal 128 that engages the substrate at adesired elevation of the pedestal 128.

Optionally, a cooling channel 147 is formed in the annular base plate148 of the gas distribution system 108 to cool the annular base plate148 during operation. A heat transfer fluid, such as water, ethyleneglycol, a gas, or the like, may be circulated through the coolingchannel 147 such that the base plate 148 is maintained at a predefinedtemperature.

A chamber liner assembly 127 is disposed within the processing region120B in very close proximity to the sidewalls 101, 112 of the chamberbody 102 to prevent exposure of the sidewalls 101, 112 to the processingenvironment within the processing region 120B. The liner assembly 127includes a circumferential pumping cavity 125 that is coupled to apumping system 164 configured to exhaust gases and byproducts from theprocessing region 120B and control the pressure within the processingregion 120B. A plurality of exhaust ports 131 may be formed on thechamber liner assembly 127. The exhaust ports 131 are configured toallow the flow of gases from the processing region 120B to thecircumferential pumping cavity 125 in a manner that promotes processingwithin the system 100.

FIGS. 2A-2D are top views of various embodiments of a pedestal that maybe utilized as the pedestal 128 in the plasma system 100 of FIG. 1. Eachof the pedestals shown in FIGS. 2A-2D include a plurality of zones thatmay be individually heated. Each of the zones may also be individuallymonitored for temperature metrics and adjusted, as needed, based on adesired temperature profile.

FIG. 2A shows the top surface of a pedestal 200A having three zones,such as an inner zone 205, and intermediate zone 210 and an outer zone215. In one embodiment, each of the zones 205, 210 and 215 areconcentric. As an example, the inner zone 205 may include a radius from0 to about 85 millimeters (mm) from the center of the pedestal. Asanother example, the intermediate zone 210 may include an inside radiussubstantially the same as the radius of the outer perimeter of the innerzone 205 to a radius of about 123 mm. As another example, the outer zone215 may include an inside radius substantially the same as the radius ofthe outer perimeter of the intermediate zone 210 to a radius of about150 mm or greater, such as about 170 mm, for example, about 165 mm.

FIG. 2B shows a pedestal 200B wherein a plurality of zones 220A-2200extend in sections around the pedestal in a pie shape. Each zone 220A,220B and 220C may be heated similarly or differently depending ondesired processing conditions. While the pedestal 200B includes threezones, the number of zones may be greater or less than three.

FIG. 2C shows a pedestal 200C wherein a plurality of zones 220A-220C areprovided in a pie shape, similar to the pedestal 200B shown in FIG. 2B.However, the pedestal 200C also includes an inner zone 205 similar tothe pedestal 200A shown in FIG. 2A. The inner zone 205 may extend from acenter of the pedestal 200C to a radius of about 50 mm or greater, suchas between about 80 mm to about 90 mm.

FIG. 2D shows a pedestal 200D wherein a plurality of outer zones 225Aand 225B surround an inner zone 205. In one embodiment, each of theplurality of outer zones 225A and 225B are arc-shaped. In someembodiments, each of the plurality of outer zones 225A and 225B areshaped substantially as a semicircle. The inner zone 205 may extend froma center of the pedestal 200C to a radius of about 50 mm or greater,such as between about 80 mm to about 90 mm.

FIG. 3 is a cross-sectional view of one embodiment of a pedestal 128that may be used in the plasma system 100 of FIG. 1. The pedestal 128includes the stem 126 that is configured as a tubular member or hollowshaft. The stem 126 couples to the pedestal 128 by a flange 133.

The pedestal 128 comprises a multi-zone heater having a central heater300A and one or more outer heaters shown as 300B. The central heater300A and the outer heaters 300B may be utilized to provide multiple,independently controlled heating zones on the pedestal 128. For example,the pedestal 128 may include a central zone configured as a firstheating zone 305A and one or more outer zones shown as 305B and 305C,which may be similar to the pedestal 200C shown in FIG. 2C. The pedestal128 may also include an electrode 310 therein for use in plasmageneration in the adjacent processing region. The electrode 310 may be aconductive plate or a mesh material that is embedded in a first portion315 that forms a body of the pedestal 128. Likewise, each of the centralheater 300A and the outer heaters 300B may be a wire or other electricalconductor embedded in the first portion 315 of the pedestal 128.

Electrical leads, such as wires, for the central heater 300A and theouter heaters 300B, as well as the electrode 310, may be providedthrough the stem 126. A dielectric insert 320 may be used to separatethe electrical leads within the stem 126. For example, the dielectricinsert 320 may be made of a ceramic material and include channelstherein extending along a longitudinal axis A of the pedestal 128.Additionally, temperature monitoring devices 330, such as flexiblethermocouples, may be routed through the dielectric insert 320 tomonitor various zones of the pedestal 128. In FIG. 3, temperaturemonitoring devices 330 are shown in channels 325A-325C. Other channelsnot shown in the cross-sectional view of FIG. 3 may contain electricalleads for connection to the central heater 300A and the outer heaters300B, as well as to the electrode 310.

At least a portion of the channels 325A-325C within the dielectricinsert 320 include a radially outwardly curved guide portion 335, shownat an end of the channels 325B and 325C proximate to, and ending at, thepedestal 128. The guide portion 335 allows the temperature monitoringdevices 330 to be inserted from the dielectric insert 320 and into agroove 340 formed in a side of the first portion 315 of the pedestal128. At least one side of the groove 340 is bounded by a second portion345 in the form of a plate that is coupled to the first portion 315 ofthe pedestal 128. Thus, the channels 325A-325C provide for insertion ofthe temperature monitoring devices 330 from the base assembly 129 andprovide a guide through the stem 126 and into the respective grooves 330of the pedestal 128. This provides easy replacement of temperaturemonitoring devices 330 as well as adjustment of measurement locations ofthe temperature monitoring devices 330 within the pedestal 128.

FIGS. 4A-4C are plan views of the pedestal 128 taken along section line4-4 in FIG. 3 showing various embodiments of a dielectric insert. Thedielectric inserts shown in FIGS. 4A-4C may be used in the pedestal 128of FIG. 3.

FIG. 4A shows a plan (end) view of a specific dielectric insert 400Ahaving a plurality of channels 405A-405G formed in a u-shape extendingtherein from an outer surface thereof. The channels 405A-405G extend theentire length of the dielectric insert 400A. The dielectric insert 400Aalso includes a central channel 410 extending therethrough in the lengthdirection thereof. At least a portion of the channels 405A-405G and 410include an electrical lead or terminal to provide electricalcommunication between a power source(s) (not shown) and the centralheater 300A, the outer heaters 300B, and well as the electrode 310. Forexample, for a three zone heated pedestal for use in a plasma process,electrical terminals 415A-415C, disposed in channels 405E-405G,respectively, may be provided by the dielectric insert 400A. Theelectrical terminals 415A-415C may provide power to the central heater300A and the outer heaters 300B shown in FIG. 3. A RF return terminal420 may be disposed in channel 405A. The RF return terminal 420 mayprovide an electrical path from the electrode 310 (shown in FIG. 3) toground, or alternatively provide RF bias to the electrode 310 when aseparate RF tuning device is utilized. A terminal 425 may be disposed inthe central channel 410. The terminal 425 may be a common return or aground for the electrical terminals 415A-415C. The terminals 415A-415Cmay be configured for alternating current (AC) power or direct current(DC) power. Lastly, the temperature monitoring devices 330 may bedisposed in the channels 405B-405D. In some embodiments, positions ofthe terminal 425 and the RF return terminal 420 may be switched. Anadvantage of this design may be enhanced RF uniformity (i.e., a moreuniform RF field due to the placement at the center) and thermal energymay be more evenly distributed. Additional holes 430, shown in phantomin FIG. 4A, may be added, if needed, for additional terminals and/ortemperature monitoring devices.

FIG. 4B shows a dielectric insert 400B having a plurality of channels405A-405G that is similar to the dielectric insert 400A shown in FIG.4A. In this embodiment, the dielectric insert 400B has a circumferentialsymmetrical design. The RF return terminal 420 is disposed in thecentral channel 410 and the electrical terminals 415A-415C alternatewith the temperature monitoring devices 330. The terminal 425, which maybe a common return or a ground for the electrical terminals 415A-415C,is disposed in an exterior channel, such as channel 405E.

The monolithic dielectric insert 400A or 400B is used to electricallyinsulate the terminals from each other. While not shown, one of more ofthe channels 405A-405G may be a hole similar to the central channel 410.The number of channels (i.e., slots or holes) may be varied depending onthe number of desired zones in the pedestal 128. When one or more of theterminals include a small cross-section and/or has a low electricalinsulation requirement, multiple terminals may be provided in a singlechannel. In the embodiments shown in FIGS. 4A and 4B, the channels405A-405G are evenly distributed at a substantially equal radiallocation. However, the channels 405A-405G may be distributed in anon-uniform manner, at different angles, as well as different radialpositions.

FIG. 4C shows a dielectric insert 400C comprising a plurality ofdielectric sections 435. Each of the dielectric sections 435 may includeholes 440 for electrical terminals and temperature monitoring devices(not shown) similar to the electrical terminals 415A-415C, the RF returnterminal 420 and the terminal 425 shown in FIGS. 4A and 4B. Each of thedielectric sections 435 may have the same or a different cross-sectionor shape. One or more of the dielectric sections 435 may includealignment features to facilitate indexing and/or coupling betweenadjacent dielectric sections 435 and/or the sidewall of the stem 126.One or more of the dielectric sections 435 may contact each other wheninstalled in the stem 126, or a gap may be provided therebetween.

FIG. 5 is an exploded cross-sectional view of one embodiment of apedestal 128 that may be used in the plasma system 100 of FIG. 1. As anexample, the pedestal 128 comprises a three zone heater having a centralzone 500A, an intermediate zone 500B and an outer zone 500C powered byrespective heating elements 505A, 505B and 505C. In one embodiment, thepedestal 128, as well as the stem 126, is made of a ceramic material.

Power for the heating elements 505A, 505B and 505C is provided throughthe stem 126 via a dielectric insert 320, which may be made of a ceramicmaterial. The dielectric insert 320 includes a plurality of slots 510extending inwardly of the outer circumferential wall thereof and overthe length direction thereof, within which electrical terminals 515 forthe heating elements 505A, 505B and 505C may be electrically isolatedfrom one another. A terminal 425, which may be a common electricalreturn lead or a ground, is disposed in a central channel 410 of thedielectric insert 320.

Temperature monitoring devices 518A and 518B is disposed in channels520A and 520B. The temperature monitoring devices 518A and 518B areflexible thermocouples utilized to monitor temperature of the outer zone500C and the intermediate zone 500B, respectively, of the three zoneheater. A central temperature monitoring device 525 may be providedthrough the dielectric insert 320 to monitor the central zone 500A.Additionally, an RF return terminal 420 may be provided through thedielectric insert 320 for the electrode 310 in the pedestal 128.

The temperature monitoring devices 518A and 518B may be inserted into adistal end of the stem 126 and routed though the dielectric insert 320while being guided by the channels 520A and 520B. The channels 520A and520B include a guide portion 335 comprising a curved surface 530. Thecurved surface 530 redirects the temperature monitoring devices 518A and518B extended into the stem 126 into respective grooves 535A and 535Bformed in a first portion 315 of the pedestal 128. The grooves 535A and535B may be formed in a lower surface 540 of the first portion 315 ofthe pedestal 128. A separate groove (not shown in the cross sectionalview of FIG. 5) may be provided for the central temperature monitoringdevice 525.

As stated above, the pedestal 128 comprises a ceramic material. Thegrooves 535A and 535B may be formed in the first portion 315 prior tosintering of the ceramic material. A second portion 345 of the pedestal128, also made of a ceramic material, may then be bonded to the lowersurface 540 of the first portion. The first portion 315 and the secondportion 345 may be bonded together by a low-temperature/low-pressurebonding process, such as a glass-phase bonding process. As sinteringtemperatures may cause the grooves 535A and 535B to deform or collapse,the low-temperature/low-pressure bonding process provides formaintenance of the dimensions of the grooves 535A and 535B. The stem126, which is also made of a ceramic material, may also be bonded to thesecond portion 345 by the low-temperature/low-pressure bonding process.Once bonding is completed, the dielectric insert 320 may be insertedinto the inside diameter of the stem 126. Thereafter, the terminals andtemperature monitoring devices may be installed in the channels of thedielectric insert.

The placement of the temperature monitoring devices 518A and 518B withinthe grooves 535A and 535B provides enhanced temperature measurement ofthe outer zone 500C and the intermediate zone 500B as compared toconventional heaters. For example, in conventional heaters, temperaturemonitoring of outer zones of the heater is based on monitoring of theresistance of the heating elements embedded in the heater. Temperaturemonitoring at low temperatures (e.g., below about 300 degrees C.,utilized in some film deposition processes) is difficult using theconventional resistance coefficients of the heating elements. However,utilization of the grooves 535A and 535B and corresponding temperaturemonitoring devices 518A and 518B, provides more precise temperaturemeasurement than can be provided using resistance coefficients of theheating elements. This enhanced temperature monitoring provides moreaccurate temperature metrics in the outer zone 500C and the intermediatezone 500B, especially at low temperatures. The temperature monitoringprovided by the temperature monitoring devices 518A and 518B may alsofacilitate faster temperature measurement response times at high or lowtemperatures such that a desired temperature profile across the pedestal128 may be realized. The desired temperature profile across the pedestal128 provides a desired temperature profile on a substrate whichincreases uniformity in films deposited on the substrate.

FIG. 6 is a side cross-sectional view of another embodiment of apedestal 600 that may be used in the plasma system 100 of FIG. 1. As anexample, the pedestal 600 comprises a three zone heater having a centralzone 605A, an intermediate zone 605B and an outer zone 605C powered byrespective heating elements 610A, 610B and 610C. In this embodiment, thezones of the pedestal 600 may be substantially thermally isolated inorder to enhance tuning of each zone.

In one embodiment, each zone of the pedestal 600 may comprise materialswith different thermal properties. For example, central zone 605A maycomprise a ceramic material having a first thermal conductivity valuewhile the intermediate zone 605B and/or the outer zone 605C may comprisea ceramic material having a second thermal conductivity value that isdifferent than the first thermal conductivity value. In someembodiments, a ceramic material having a third thermal conductivityvalue different than the first and second thermal conductivity valuesmay be used for one of the zones. The ceramic materials having differentthermal conductivity values may be used as desired to construct thezones of the pedestal 600. In another embodiment, gaps 622 may beprovided between adjacent heating elements to smooth temperaturegradients between zones. The size of the gaps 622 (i.e., distancebetween heating elements) may be chosen based on a desired thermalhomogenization between zones.

In another embodiment, thermal breaks 615 may be used between heatingelements 610A and 610B, and 610B and 610C. The thermal breaks 615 extendcircumferentially and are utilized to reduce thermal conduction from onezone to an adjacent zone. The thermal breaks 615 may comprise one ormore cavities 620 formed in the body of the pedestal 600, or one or morebarriers 625. The cavities 620 may be a simple space or void in theceramic material and the barriers 625 may be aluminum oxide or othermaterial that is different than the material of the remainder of thepedestal 600. While the thermal breaks 615 are shown in between heatingelements, the thermal breaks 615 may be positioned in other locations inthe pedestal 600.

FIG. 7 is a side cross-sectional view of another embodiment of apedestal 700 that may be used in the plasma system 100 of FIG. 1. As anexample, the pedestal 700 comprises a three zone heater having a centralzone 705A, an intermediate zone 705B and an outer zone 705C powered byrespective heating elements 710A, 710B and 710C. In this embodiment, theheating elements may at least partially overlap and/or be positioned atdifferent elevations within the pedestal 700. The positioning of theheating elements within the pedestal 700 allows more design flexibility,such as variations in heating element size and/or shape. Gaps 715 mayalso be utilized in one or both of the vertical spacing (Z direction)between adjacent heating elements, and lateral spacing (Y direction)between adjacent heating elements similar to the gaps 622 shown in FIG.6. Additionally, the elevations of the heating elements may be differentthan the configuration shown in FIG. 7. For example, the heating element710A may be positioned above one or both of the heating elements 710Band 710C. In another example, the heating element 710A may be coplanarwith either the heating element 710B or 710C.

FIGS. 8A and 8B are side cross-sectional view showing a portion ofanother embodiment of a pedestal 800 that may be used in the plasmasystem 100 of FIG. 1. The pedestal 800 includes a heating element 810that may be similar to the outer heating elements 300B described in FIG.3 or heating element 505C described in FIG. 5. The pedestals 800 alsoinclude a groove 805 that may be similar to the groove 340 described inFIG. 3 or the groove 535A and/or 535B described in FIG. 5. Theembodiments of the pedestals as described herein include the grooves805, which provide flexibility in temperature monitoring as well asenhancing temperature monitoring of the pedestals.

In one embodiment, shown in FIG. 8A, the temperature monitoring device330 is positioned into the groove 805 (from the distal end of the stem126 (shown in FIGS. 3 and 5)) and placed in contact with the outer wall815 of the groove 805. Advantages of contact between a wall and thetemperature monitoring device 330 include faster response time andrepeatable readings, because the temperature monitoring device 330 isnot spaced from the surface to be measured by an air or vacuum gap. Thisconfiguration may be particularly useful in low temperature applications(i.e., below 300 degrees Celsius) and may also be beneficial in atemperature control loop.

In another embodiment, shown in FIG. 8B, the temperature monitoringdevice 330 is spaced-away from walls of the groove 805 such that nocontact is provided between walls of the groove 805 and the temperaturemonitoring device 330. In some embodiments, the spacing provides athermal well 820 between walls of the groove 805 and the temperaturemonitoring device 330. The thermal well 820 may introduce an impedancewhich may be used to damp temperature variations. While the spacing mayreduce response time, the thermal well 820 may be advantageous in hightemperature applications. Dimensions of the groove 805 may be designedsuch that the thermal well 820 is substantially isothermal to increaseaccuracy in temperature readings.

As shown, the locations of the temperature monitoring devices 330 in thegrooves 805 (including grooves 340 (FIG. 3) and grooves 535A, 535B (FIG.5)) may be chosen based on a desired measurement location within thepedestal. The measurement location may be chosen based on desiredresponse time, avoidance of heating element interference, or otherreasons. In some embodiments, the end of the temperature monitoringdevice 330 may be at or near the center in one or more zones. In otherembodiments, the end of the temperature monitoring device 330 may beoff-center in one or more zones. Precise positioning of a temperaturemonitoring device 330 within the grooves 805 is uncomplicated using atemperature monitoring device 330 of a specific length when the lengthof the dielectric insert 320 is known. For example, when the length of achannel within the dielectric insert 320 is known, and the position ofthe heating element 810 within the pedestal 800 is known, a temperaturemonitoring device 330 of a desired length can be inserted into thedielectric insert 320 such that an end thereof is positioned at adesired location in the groove 805. In another example, if contact withthe wall of the groove 805 is desired, the temperature monitoring device330 may be made to a length that accounts for the length of a channelwithin the dielectric insert 320 as well as the length of the groove805. Embodiments of the pedestals as described herein also easesreplacement of the temperature monitoring devices 330 using thedielectric insert 320 such that temperature monitoring devices 330 ofvarying lengths may be used, if desired, to change the measurementlocation.

FIGS. 9A and 9B are side views of another embodiment of a pedestal 900Aand 900B, respectively that may be used in the plasma system 100 ofFIG. 1. Each of the pedestals 900A and 900B comprise a heater 905, whichmay be a multi-zone heater as described herein. Each of the pedestals900A and 900B are coupled to a stem 126 that may include a dielectricinsert 320 as described in FIGS. 3, 4 and 5.

In the embodiment shown in FIG. 9A, a RF tuning device 910 may becoupled to the heater 905 via a terminal disposed in the dielectricinsert 320. The terminal may be coupled to the electrode 310 shown inFIGS. 3 and 5. The RF tuning device 910 may facilitate “bottom tuning”of the pedestal 900A/900B. The RF tuning device 910 may include atunable capacitor 920, such as a vacuum capacitor. The tunable capacitor920 may be automatically tuned by an actuator 925, such as a servomotor. In this configuration, RF supplied to the plasma can be varied byadjustment of the tunable capacitor 920, which may enhance filmdeposition properties on a substrate.

In the embodiment shown in FIG. 9B, a RF device 915 may be coupled tothe heater 905 via a terminal disposed in the dielectric insert 320. Theterminal may be coupled to the electrode 310 shown in FIGS. 3 and 5. TheRF device 915 may facilitate RF bias and/or provide a chucking functionto the pedestal 900B. The RF device 915 may include a RF generator 930and a match circuit 935. The RF device 915 may be used to form acapacitively coupled plasma which may be used to bias a substrate on theheater 905. When the RF device 915 is combined with another RF source ina system, such as the RF source 165 shown and described in FIG. 1, bothion density and ion energy may be tuned, which may enhance filmdeposition on a substrate. In some embodiment, the RF generator 930 mayinclude a frequency that is different than a frequency of the RF source165. In some embodiments, the RF devices may be coupled to the electrode310 to provide an electrostatic chucking function to the pedestal 900B.

Embodiments of a pedestal described herein provide a multi-zone heaterthat provides more accurate readings as well as a wider range oftemperature measurement. Low temperature measurement is also enhanced,which increases the applicability of the heater to low temperature filmformation processes.

While the foregoing is directed to embodiments of the disclosure, otherand further embodiments of the disclosure may be devised withoutdeparting from the basic scope thereof, and the scope thereof isdetermined by the claims that follow.

What is claimed is:
 1. A pedestal for a semiconductor processingchamber, comprising: a body comprising a ceramic material and having aplurality of grooves formed in a surface of the body; a plurality ofheater elements encapsulated within the body; a ceramic plate boundingat least one side of the grooves; and a shaft coupled to the body, theshaft having a plurality of channels formed therein and one or morecurved guide portions that are aligned with a channel of the pluralityof channels to a groove of the plurality of grooves.
 2. The pedestal ofclaim 1, wherein the hollow shaft comprises a ceramic material.
 3. Thepedestal of claim 1, wherein the hollow shaft comprises a dielectricinsert having the curved guide portions and the plurality of channels.4. The pedestal of claim 3, further comprising multiple terminalsdisposed inside the dielectric insert.
 5. The pedestal of claim of claim4, wherein the terminals are symmetrically distributed with a centerterminal connected to a metallic RF mesh.
 6. The pedestal of claim of 5,wherein the center terminal is connected to ground, an RF generator, atunable capacitor, or combinations thereof.
 7. The pedestal of claim 1,wherein the plurality of heater elements comprises three to four heatingelements.
 8. The pedestal of claim 7, wherein the heater elements areconcentric.
 9. The pedestal of claim 7, wherein the heater elements arein a pie shape.
 10. The pedestal of claim 7, wherein the heater elementsare in different layers inside the ceramic body.
 11. The pedestal ofclaim 7, wherein the heater elements are separated by thermal voidformed in the body.
 12. A pedestal for a semiconductor processingchamber, comprising: a body comprising a ceramic material, wherein oneor more grooves are formed a major surface of the body; a ceramic platecoupled to the major surface and bounding at least one side of thegrooves; a plurality of heater elements encapsulated within the body;and a hollow shaft coupled to the body, the hollow shaft having aplurality of channels formed therein, wherein at least a portion of thechannels comprise a curved portion having an end terminating at an endof at least one of the grooves formed in the body.
 13. The pedestal ofclaim 12, wherein the hollow shaft comprises a ceramic material.
 14. Thepedestal of claim 12, wherein the plurality of heater elements comprisesthree to four heating elements.
 15. The pedestal of claim 14, whereinthe heater elements are concentric.
 16. The pedestal of claim 14,wherein the heater elements are in a pie shape.
 17. The pedestal ofclaim 14, wherein the heater elements are in different layers inside theceramic body.
 18. The pedestal of claim 14, wherein the heater elementsare separated by thermal void formed in the body.
 19. A pedestal for asemiconductor processing chamber, comprising: a body comprising aceramic material, wherein one or more grooves are formed a major surfaceof the body; a ceramic plate coupled to the major surface and boundingat least one side of the grooves; a plurality of heater elementsencapsulated within the body; and a hollow shaft comprising a ceramicmaterial coupled to the body, wherein the hollow shaft includes aplurality of channels formed therein, and wherein at least a portion ofthe channels comprise a curved guide portion having an end terminatingat an end of at least one of the grooves formed in the body.
 20. Thepedestal of claim 19, further comprising a dielectric insert in thehollow shaft; and multiple terminals disposed inside the dielectricinsert.